onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB047N10 FDB047N10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001076-FDB047N10 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 15265pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Communications & Networking Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB047N10 - 001076-FDB047N10 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDB047N10DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDB047N10CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDB047N10TR-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3; Channel Type Onsemi - 84W8844 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 120 A, 100 V, 0.0039 Ohm, 10 V, 3.5 V Rohs Compliant Onsemi - 95W3148 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3, Full Reel; Channel Type Onsemi - 07P9158 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK - 598-FDB047N10 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB047N10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001076-FDB047N10 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 15265pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Communications & Networking Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB047N10 - 001076-FDB047N10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB047N10
001076-FDB047N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB047N10 001076-FDB047N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001076-FDB047N10 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 15265pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Communications & Networking Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001076-FDB047N10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 15265pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Communications & Networking
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB047N10DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB047N10DKR-ND
Single FETs, MOSFETs FDB047N10DKR-ND
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB047N10CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB047N10CT-ND
Single FETs, MOSFETs FDB047N10CT-ND
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB047N10TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB047N10TR-ND
Single FETs, MOSFETs FDB047N10TR-ND
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3; Channel Type Onsemi - 84W8844 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3; Channel Type Onsemi
84W8844
Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3; Channel Type Onsemi 84W8844
MOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:375W RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:375W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 120 A, 100 V, 0.0039 Ohm, 10 V, 3.5 V Rohs Compliant Onsemi - 95W3148 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 120 A, 100 V, 0.0039 Ohm, 10 V, 3.5 V Rohs Compliant Onsemi
95W3148
Mosfet Transistor, N Channel, 120 A, 100 V, 0.0039 Ohm, 10 V, 3.5 V Rohs Compliant Onsemi 95W3148
MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3, Full Reel; Channel Type Onsemi - 07P9158 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3, Full Reel; Channel Type Onsemi
07P9158
Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3, Full Reel; Channel Type Onsemi 07P9158
MOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDB047N10
MOSFET FDB047N10
MOSFET 100V N-Channel PowerTrench

MOSFET 100V N-Channel PowerTrench

Buy Now Datasheet
Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK - 598-FDB047N10 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK
598-FDB047N10
Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK 598-FDB047N10
Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK

Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB047N10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB047N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB047N10
MOSFET N-CH 100V 120A D2PAK

MOSFET N-CH 100V 120A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 001076-FDB047N10 FDB047N10DKR-ND 84W8844 95W3148 07P9158 FDB047N10 598-FDB047N10 FDB047N10
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB047N10 Single FETs, MOSFETs Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3; Channel Type Onsemi Mosfet Transistor, N Channel, 120 A, 100 V, 0.0039 Ohm, 10 V, 3.5 V Rohs Compliant Onsemi Mosfet, N Channel, 100V, 0.0039Ohm, 120A, To-263-3, Full Reel; Channel Type Onsemi MOSFET Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 375000 milliwatts 375000 milliwatts 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-3 TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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