onsemi Single FETs, MOSFETs FDB024N04AL7

Description
N-Channel 40V 100A (Tc) 214W (Tc) Surface Mount TO-263-7
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Description
N-Channel 40V 100A (Tc) 214W (Tc) Surface Mount TO-263-7
Request a Quote Datasheet

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Single FETs, MOSFETs - FDB024N04AL7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N04AL7TR-ND
Single FETs, MOSFETs FDB024N04AL7TR-ND
N-Channel 40V 100A (Tc) 214W (Tc) Surface Mount TO-263-7

N-Channel 40V 100A (Tc) 214W (Tc) Surface Mount TO-263-7

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N04AL7 - 001073-FDB024N04AL7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N04AL7
001073-FDB024N04AL7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N04AL7 001073-FDB024N04AL7
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001073-FDB024N04AL7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263) Dimension: TO-263-7, D2Pak (6 Leads + Tab) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 109nC @ 10V Max Input Capacitance: 7300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001073-FDB024N04AL7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263)
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 109nC @ 10V
Max Input Capacitance: 7300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 800

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Sheung Wan, Hong Kong
MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET

MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB024N04AL7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB024N04AL7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB024N04AL7
MOSFET N-CH 40V 100A TO263-7

MOSFET N-CH 40V 100A TO263-7

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB024N04AL7TR-ND 001073-FDB024N04AL7 FDB024N04AL7 FDB024N04AL7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N04AL7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-7, D2PAK (6 Leads + Tab) TO-263; SOT3; D2PAK (TO-263) 7300 pF @ 25 V
V(BR)DSS 40 volts
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