onsemi Single FETs, MOSFETs FDA8440

Description
N-Channel 40V 30A (Ta), 100A (Tc) 306W (Tc) Through Hole TO-3PN
Request a Quote Datasheet
Description
N-Channel 40V 30A (Ta), 100A (Tc) 306W (Tc) Through Hole TO-3PN
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDA8440-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA8440-ND
Single FETs, MOSFETs FDA8440-ND
N-Channel 40V 30A (Ta), 100A (Tc) 306W (Tc) Through Hole TO-3PN

N-Channel 40V 30A (Ta), 100A (Tc) 306W (Tc) Through Hole TO-3PN

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA8440 - 066904-FDA8440 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA8440
066904-FDA8440
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA8440 066904-FDA8440
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066904-FDA8440 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 306W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 30A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 450nC @ 10V Max Input Capacitance: 24740pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066904-FDA8440
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 306W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 30A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 450nC @ 10V
Max Input Capacitance: 24740pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDA8440
MOSFET FDA8440
MOSFET 40V 100A 2.1mOhm N-Chan Power Trench

MOSFET 40V 100A 2.1mOhm N-Chan Power Trench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA8440 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA8440
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA8440
MOSFET N-CH 40V 30A/100A TO3PN

MOSFET N-CH 40V 30A/100A TO3PN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDA8440-ND 066904-FDA8440 FDA8440 FDA8440
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA8440 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN TO-3P-3, SC-65-3
V(BR)DSS 40 volts
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