onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30 FDA38N30

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204086-FDA38N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FDA38N30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): STW75NF30; STY60NK30Z; STW74NF30; STW46NF30; Introduction Date: April 16, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics, Lighting Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30 - 204086-FDA38N30 - Win Source Electronics
    Win Source Electronics
  • Bipolar Transistors - 1867377 - RS Components, Ltd.
    RS Components, Ltd.
  • Bipolar Transistors - 1868119 - RS Components, Ltd.
    RS Components, Ltd.
  • Bipolar Transistors - 1868119P - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - FDA38N30-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDA38N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FDA38N30 - Rochester Electronics
    Rochester Electronics
  • N Channel Mosfet, 300V, 38A, To-3Pn; Transistor Polarity Onsemi - 92R5517 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 38 A, 300 V, 0.07 Ohm, 10 V, 5 V Rohs Compliant Onsemi - 31Y1333 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA38N30 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204086-FDA38N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FDA38N30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): STW75NF30; STY60NK30Z; STW74NF30; STW46NF30; Introduction Date: April 16, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics, Lighting Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30 - 204086-FDA38N30 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30
204086-FDA38N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30 204086-FDA38N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204086-FDA38N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FDA38N30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): STW75NF30; STY60NK30Z; STW74NF30; STW46NF30; Introduction Date: April 16, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics, Lighting Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204086-FDA38N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Family Name: FDA38N30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 85 mOhm @ 19A, 10V
Alternative Parts (Cross-Reference): STW75NF30; STY60NK30Z; STW74NF30; STW46NF30;
Introduction Date: April 16, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Consumer Electronics, Lighting
Quantity per package: 450

Buy Now Datasheet
Bipolar Transistors - 1867377 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1867377
Bipolar Transistors 1867377
ON Semiconductor, FDA38N30

ON Semiconductor, FDA38N30

Supplier's Site
Bipolar Transistors - 1868119 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1868119
Bipolar Transistors 1868119
ON Semiconductor, FDA38N30

ON Semiconductor, FDA38N30

Supplier's Site
Bipolar Transistors - 1868119P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1868119P
Bipolar Transistors 1868119P
ON Semiconductor, FDA38N30

ON Semiconductor, FDA38N30

Supplier's Site
Single FETs, MOSFETs - FDA38N30-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA38N30-ND
Single FETs, MOSFETs FDA38N30-ND
N-Channel 300V 38A (Tc) 312W (Tc) Through Hole TO-3PN

N-Channel 300V 38A (Tc) 312W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Single FETs, MOSFETs - FDA38N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA38N30
Single FETs, MOSFETs FDA38N30
MOSFET N-CH 300V 38A TO3PN

MOSFET N-CH 300V 38A TO3PN

Supplier's Site Datasheet
- FDA38N30 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDA38N30
FDA38N30
Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
N Channel Mosfet, 300V, 38A, To-3Pn; Transistor Polarity Onsemi - 92R5517 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 300V, 38A, To-3Pn; Transistor Polarity Onsemi
92R5517
N Channel Mosfet, 300V, 38A, To-3Pn; Transistor Polarity Onsemi 92R5517
N CHANNEL MOSFET, 300V, 38A, TO-3PN; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:38A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 300V, 38A, TO-3PN; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:38A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 38 A, 300 V, 0.07 Ohm, 10 V, 5 V Rohs Compliant Onsemi - 31Y1333 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 38 A, 300 V, 0.07 Ohm, 10 V, 5 V Rohs Compliant Onsemi
31Y1333
Mosfet Transistor, N Channel, 38 A, 300 V, 0.07 Ohm, 10 V, 5 V Rohs Compliant Onsemi 31Y1333
MOSFET Transistor, N Channel, 38 A, 300 V, 0.07 ohm, 10 V, 5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 38 A, 300 V, 0.07 ohm, 10 V, 5 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDA38N30
MOSFET FDA38N30
MOSFET UniFET1 300V N-chan MOSFET

MOSFET UniFET1 300V N-chan MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA38N30 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA38N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA38N30
MOSFET N-CH 300V 38A TO3PN

MOSFET N-CH 300V 38A TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey ODG (Origin Data Global) Rochester Electronics Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Bipolar RF Transistors Bipolar RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204086-FDA38N30 1867377 1868119P FDA38N30-ND FDA38N30 FDA38N30 92R5517 31Y1333 FDA38N30 FDA38N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30 Bipolar Transistors Bipolar Transistors Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 300V, 38A, To-3Pn; Transistor Polarity Onsemi Mosfet Transistor, N Channel, 38 A, 300 V, 0.07 Ohm, 10 V, 5 V Rohs Compliant Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
PD 312000 milliwatts 312000 milliwatts
TJ -55 to 150 C (-67 to 302 F) 150 C (302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3PN To-3p TO-3P TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P TO-3 TO-3 TO-3P-3, SC-65-3
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