Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 300V 38A TO3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204086-FDA38N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Family Name: FDA38N30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 85 mOhm @ 19A, 10V
Alternative Parts (Cross-Reference): STW75NF30; STY60NK30Z; STW74NF30; STW46NF30;
Introduction Date: April 16, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Consumer Electronics, Lighting
Quantity per package: 450
N-Channel 300V 38A (Tc) 312W (Tc) Through Hole TO-3PN
MOSFET N-CH 300V 38A TO3PN
MOSFET UniFET1 300V N-chan MOSFET
N CHANNEL MOSFET, 300V, 38A, TO-3PN; Transistor Polarity:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:38A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 38 A, 300 V, 0.07 ohm, 10 V, 5 V RoHS Compliant: Yes
| Rochester Electronics | ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDA38N30 | FDA38N30 | 204086-FDA38N30 | FDA38N30-ND | 1867377 | 1868119P | FDA38N30 | FDA38N30 | 92R5517 | 31Y1333 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA38N30 | Single FETs, MOSFETs | Bipolar Transistors | Bipolar Transistors | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 300V, 38A, To-3Pn; Transistor Polarity Onsemi | Mosfet Transistor, N Channel, 38 A, 300 V, 0.07 Ohm, 10 V, 5 V Rohs Compliant Onsemi | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| rDS(on) | 0.0850 ohms | 0.0700 ohms | ||||||||
| Package Type | TO-3; TO-3P | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | TO-3; TO-3P-3, SC-65-3 | To-3p | TO-3P | TO-3P-3, SC-65-3 | TO-3 | TO-3 | |
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube; Tube | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
