onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA15N65 FDA15N65

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037937-FDA15N65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 3095pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 440 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037937-FDA15N65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 3095pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 440 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Quantity per package: 30
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA15N65 - 1037937-FDA15N65 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA15N65
1037937-FDA15N65
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA15N65 1037937-FDA15N65
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037937-FDA15N65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 3095pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 440 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037937-FDA15N65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 3095pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 440 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
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Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA15N65 - Shenzhen Shengyu Electronics Technology Limited
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Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 1037937-FDA15N65 FDA15N65 FDA15N65
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA15N65 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 260000 milliwatts
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