onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA15N65 FDA15N65

Power Field-Effect Transistor

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037937-FDA15N65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 3095pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 440 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

MOSFET N-CH 650V 16A TO3PN Product overview: FDA15N65 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDA15N65 can be used for catalog matching and distributor lookup.