N-Channel 75V 120A (Tc) 375W (Tc) Through Hole TO-3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037935-FDA032N08
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 15160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 450
MOSFETs PT3 75V 3.2mohm Product overview: FDA032N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 3.2mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 3.2mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDA032N08 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 75V 120A TO3PN
MOSFET N-CH 75V 120A TO3PN
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDA032N08-ND | 1037935-FDA032N08 | 2088-FDA032N08 | FDA032N08 | FDA032N08 | FDA032N08 | FDA032N08 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08 | 75V 3.2mohm MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | Tube | TO-3; TO-3P | TO-3; TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | |
| V(BR)DSS | 75 volts | 75 volts | |||||
| PD | 375000 milliwatts | 375 milliwatts | 375000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
