onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08 FDA032N08

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037935-FDA032N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 15160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08 - 1037935-FDA032N08 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDA032N08 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDA032N08-ND - DigiKey
    DigiKey
  • FDA032N08 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA032N08 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037935-FDA032N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 15160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08 - 1037935-FDA032N08 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08
1037935-FDA032N08
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08 1037935-FDA032N08
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037935-FDA032N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 15160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037935-FDA032N08
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 15160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA032N08 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA032N08
Single FETs, MOSFETs FDA032N08
MOSFET N-CH 75V 120A TO3PN

MOSFET N-CH 75V 120A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDA032N08-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA032N08-ND
Single FETs, MOSFETs FDA032N08-ND
N-Channel 75V 120A (Tc) 375W (Tc) Through Hole TO-3PN

N-Channel 75V 120A (Tc) 375W (Tc) Through Hole TO-3PN

Buy Now Datasheet
- FDA032N08 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDA032N08
FDA032N08
Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDA032N08
MOSFET FDA032N08
MOSFET PT3 75V 3.2mohm

MOSFET PT3 75V 3.2mohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA032N08 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA032N08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA032N08
MOSFET N-CH 75V 120A TO3PN

MOSFET N-CH 75V 120A TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1037935-FDA032N08 FDA032N08 FDA032N08-ND FDA032N08 FDA032N08 FDA032N08
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA032N08 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 75 volts 75 volts
PD 375000 milliwatts 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-3; SOT3; TO-3PN TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P TO-3P-3, SC-65-3
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