The N-Channel MOSFET transistor has a maximum drain-source voltage of 600 V and a continuous drain current rating of 4.5 A at a case temperature of 25¬8C. It features a low on-resistance of 0.82 Ohm at a gate-source voltage of 10 V, which contributes to efficient power management. The gate threshold voltage ranges from 2.5 V to 3.5 V, making it suitable for various applications. This component is RoHS compliant and is designed for high-voltage applications, including power supplies and lighting systems. It also exhibits low gate charge characteristics, enhancing its performance in switching applications. The device is avalanche rated and has been tested for reliability under various conditions.
N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037928-FCU900N60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251 (IPAK)
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 1,800
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET N-CH 600V 4.5A IPAK
MOSFETs Low Power Two-Input Logic Gate TinyLogic Product overview: FCU900N60Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Low-Power, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCU900N60Z can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V RoHS Compliant: Yes
MOSFET N-CH 600V 4.5A IPAK
MOSFET Low Power Two-Input Logic Gate TinyLogic
| DigiKey | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCU900N60Z-ND | 1037928-FCU900N60Z | FCU900N60Z | FCU900N60Z | 2088-FCU900N60Z | 55W4077 | FCU900N60Z | FCU900N60Z |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCU900N60Z | Single FETs, MOSFETs | Low-Power MOSFET Transistor | Mosfet Transistor, N Channel, 4.5 A, 600 V, 0.82 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-251-3 Stub Leads, IPAK | SOT3; TO-251 (IPAK) | TO-251AA | TO-251-3 Stub Leads, IPak | Tube | TO-3 | 17 nC @ 10 V | |
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 52000 milliwatts | 52000 milliwatts | 52 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
