onsemi Single FETs, MOSFETs FCU2250N80Z

N-Channel 800V 2.6A (Tc) 39W (Tc) Through Hole I-PAK

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK, 1800-TUBE Product overview: FCU2250N80Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCU2250N80Z can be used for catalog matching and distributor lookup.

Win Source Part Number: 986316-FCU2250N80Z
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® II
Package: Tube
Standard Package: 1,800
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 39W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FCU2250
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V