onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCU2250N80Z

Description
Win Source Part Number: 986316-FCU2250N80Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Tube Standard Package: 1,800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCU2250 Product Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 986316-FCU2250N80Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Tube Standard Package: 1,800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCU2250 Product Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 986316-FCU2250N80Z - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
986316-FCU2250N80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 986316-FCU2250N80Z
Win Source Part Number: 986316-FCU2250N80Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Tube Standard Package: 1,800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCU2250 Product Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 986316-FCU2250N80Z
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® II
Package: Tube
Standard Package: 1,800
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 39W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FCU2250
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - FCU2250N80Z-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCU2250N80Z-ND
Single FETs, MOSFETs FCU2250N80Z-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Through Hole I-PAK

N-Channel 800V 2.6A (Tc) 39W (Tc) Through Hole I-PAK

Buy Now Datasheet
Singapore
N-Channel 800 V 2.6 A MOSFET Transistor
278-FCU2250N80Z
N-Channel 800 V 2.6 A MOSFET Transistor 278-FCU2250N80Z
Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK, 1800-TUBE Product overview: FCU2250N80Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCU2250N80Z can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK, 1800-TUBE Product overview: FCU2250N80Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCU2250N80Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET HV SuperJunction MOS - 598-FCU2250N80Z - Utmel Electronic Limited
Hong Kong, China
MOSFET HV SuperJunction MOS
598-FCU2250N80Z
MOSFET HV SuperJunction MOS 598-FCU2250N80Z
MOSFET HV SuperJunction MOS

MOSFET HV SuperJunction MOS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SF2 800V 2.25OHM E IPAK

MOSFET SF2 800V 2.25OHM E IPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCU2250N80Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCU2250N80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCU2250N80Z
MOSFET N-CH 800V 2.6A IPAK

MOSFET N-CH 800V 2.6A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 986316-FCU2250N80Z FCU2250N80Z-ND 278-FCU2250N80Z 598-FCU2250N80Z FCU2250N80Z FCU2250N80Z
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 800 V 2.6 A MOSFET Transistor MOSFET HV SuperJunction MOS MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 39000 milliwatts 39000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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