POWER FIELD-EFFECT TRANSISTOR, N Product overview: FCPF260N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCPF260N60E can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET N CH 600V 15A TO-220F
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204081-FCPF260N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 260 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
MOSFET N CH 600V 15A TO-220F
MOSFET Low Power Two-Input Logic Gate TinyLogic
POWER FIELD-EFFECT TRANSISTOR, N
FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
MOSFET Transistor, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FCPF260N60E | FCPF260N60E | FCPF260N60E | 204081-FCPF260N60E | 488-FCPF260N60E-ND | FCPF260N60E | FCPF260N60E | 598-FCPF260N60E | 55W4068 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF260N60E | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V | Mosfet Transistor, N Channel, 15 A, 600 V, 0.22 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-CHANNEL | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||||
| Transconductance | 0.0155 kS | ||||||||
| PD | 36 milliwatts | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
