N-Channel 600V 20A (Tc) 39W (Tc) Through Hole TO-220F-3
MOSFETs 600V N-Channel SuperFET Product overview: FCPF20N60 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCPF20N60 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 133216-FCPF20N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Family Name: FCPF20N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 3080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TK20A60U(STA4,X,S); TK16A60W,S4VX(M; TK18A60V(V,Q); TK18A60V(S4V,Q);
Introduction Date: February 04, 2005
ECCN: EAR99
Country of Origin: China, United States of America
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 600V 20A TO220F
N CHANNEL MOSFET, 600V, 20A TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCPF20N60-ND | 2088-FCPF20N60 | 133216-FCPF20N60 | FCPF20N60 | FCPF20N60 | 31K6747 |
| Product Name | Single FETs, MOSFETs | N-Channel 600V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF20N60 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 600V, 20A To-220F; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | Tube | TO-220; SOT3; TO-220F | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0170 kS | |||||
| PD | 39 milliwatts | 39000 milliwatts |
