onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E FCPF190N60E

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037905-FCPF190N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20.6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 3175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E - 1037905-FCPF190N60E - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCPF190N60E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FCPF190N60EOS-ND - DigiKey
    DigiKey
  • Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 55W4067 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi - 94T9919 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF190N60E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037905-FCPF190N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20.6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 3175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E - 1037905-FCPF190N60E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E
1037905-FCPF190N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E 1037905-FCPF190N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037905-FCPF190N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20.6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 3175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037905-FCPF190N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 3175pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCPF190N60E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCPF190N60E
Single FETs, MOSFETs FCPF190N60E
MOSFET N-CH 600V 20.6A TO220F

MOSFET N-CH 600V 20.6A TO220F

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V MOSFET Transistor
2088-FCPF190N60E
600V MOSFET Transistor 2088-FCPF190N60E
MOSFETs 600V N-CHAN MOSFET Product overview: FCPF190N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCPF190N60E can be used for catalog matching and distributor lookup.

MOSFETs 600V N-CHAN MOSFET Product overview: FCPF190N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCPF190N60E can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FCPF190N60EOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF190N60EOS-ND
Single FETs, MOSFETs FCPF190N60EOS-ND
N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3

N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 55W4067 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi
55W4067
Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi 55W4067
Power MOSFET, N Channel, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Power MOSFET, N Channel, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi - 94T9919 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi
94T9919
Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi 94T9919
MOSFET, N-CH, 600V, 20.6A, 150DEG C, 39W; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20.6A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 20.6A, 150DEG C, 39W; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20.6A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCPF190N60E
MOSFET FCPF190N60E
MOSFET 600V N-CHAN MOSFET

MOSFET 600V N-CHAN MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF190N60E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF190N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF190N60E
MOSFET N-CH 600V 20.6A TO220F

MOSFET N-CH 600V 20.6A TO220F

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1037905-FCPF190N60E FCPF190N60E 2088-FCPF190N60E FCPF190N60EOS-ND 55W4067 94T9919 FCPF190N60E FCPF190N60E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E Single FETs, MOSFETs 600V MOSFET Transistor Single FETs, MOSFETs Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 39000 milliwatts 39000 milliwatts 39 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F-3 TO-220; TO-220-3 Full Pack Tube TO-220; TO-220-3 Full Pack TO-3 TO-3 TO-220; TO-220-3 Full Pack
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