onsemi Single FETs, MOSFETs FCPF190N60E

Description
N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3
  • Single FETs, MOSFETs - FCPF190N60EOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E - 1037905-FCPF190N60E - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCPF190N60E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 55W4067 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi - 94T9919 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF190N60E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCPF190N60EOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF190N60EOS-ND
Single FETs, MOSFETs FCPF190N60EOS-ND
N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3

N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E - 1037905-FCPF190N60E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E
1037905-FCPF190N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E 1037905-FCPF190N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037905-FCPF190N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20.6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 3175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037905-FCPF190N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 3175pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCPF190N60E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCPF190N60E
Single FETs, MOSFETs FCPF190N60E
MOSFET N-CH 600V 20.6A TO220F

MOSFET N-CH 600V 20.6A TO220F

Supplier's Site Datasheet
Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 55W4067 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi
55W4067
Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi 55W4067
Power MOSFET, N Channel, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Power MOSFET, N Channel, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi - 94T9919 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi
94T9919
Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi 94T9919
MOSFET, N-CH, 600V, 20.6A, 150DEG C, 39W; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20.6A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 20.6A, 150DEG C, 39W; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20.6A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF190N60E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF190N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF190N60E
MOSFET N-CH 600V 20.6A TO220F

MOSFET N-CH 600V 20.6A TO220F

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCPF190N60E
MOSFET FCPF190N60E
MOSFET 600V N-CHAN MOSFET

MOSFET 600V N-CHAN MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCPF190N60EOS-ND 1037905-FCPF190N60E FCPF190N60E 55W4067 94T9919 FCPF190N60E FCPF190N60E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF190N60E Single FETs, MOSFETs Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi Mosfet, N-Ch, 600V, 20.6A, 150Deg C, 39W; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F-3 TO-220; TO-220-3 Full Pack TO-3 TO-3 TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts 600 volts
PD 39000 milliwatts 39000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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