N-Channel 650V 19A (Tc) 35W (Tc) Through Hole TO-220F-3
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE Product overview: FCPF165N65S3L1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 19 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 19 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCPF165N65S3L1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1214449-FCPF165N65S3
Category: Discrete Semiconductor Products>Transistors
Series: SuperFET® III
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Power Dissipation (Max): 35W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-FCPF165N65S3L1-
Base Product Number: FCPF165
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Field-Effect Transistor, 19A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET SuperFET3 650V 165 mOhm, TO220F PKG
MOSFET N-CH 650V 19A TO220F-3
MOSFET, N-CH, 650V, 19A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCPF165N65S3L1-ND | 278-FCPF165N65S3L1 | 1214449-FCPF165N65S3L1 | FCPF165N65S3L1 | FCPF165N65S3L1 | FCPF165N65S3L1 | 18AC7310 |
| Product Name | Single FETs, MOSFETs | N-Channel 650 V 19 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 19A, To-220F; Transistor Polarity Onsemi | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3 | -55degC ~ 150degC | TO-3; TO-220 | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| PD | 35000 milliwatts |
