onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCPF165N65S3L1

Description
Win Source Part Number: 1214449-FCPF165N65S3 L1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Power Dissipation (Max): 35W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3 Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-FCPF165N65S3L1- OS,ONSONSFCPF165N65S 3L1 Base Product Number: FCPF165 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1214449-FCPF165N65S3L1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCPF165N65S3L1-ND - DigiKey
    DigiKey
  • FCPF165N65S3L1 - Rochester Electronics
    Rochester Electronics
  • Mosfet, N-Ch, 650V, 19A, To-220F; Transistor Polarity Onsemi - 18AC7310 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF165N65S3L1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1214449-FCPF165N65S3 L1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Power Dissipation (Max): 35W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3 Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-FCPF165N65S3L1- OS,ONSONSFCPF165N65S 3L1 Base Product Number: FCPF165 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1214449-FCPF165N65S3L1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1214449-FCPF165N65S3L1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1214449-FCPF165N65S3L1
Win Source Part Number: 1214449-FCPF165N65S3 L1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Power Dissipation (Max): 35W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3 Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-FCPF165N65S3L1- OS,ONSONSFCPF165N65S 3L1 Base Product Number: FCPF165 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1214449-FCPF165N65S3L1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® III
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Power Dissipation (Max): 35W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-FCPF165N65S3L1-OS,ONSONSFCPF165N65S3L1
Base Product Number: FCPF165
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - FCPF165N65S3L1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF165N65S3L1-ND
Single FETs, MOSFETs FCPF165N65S3L1-ND
N-Channel 650V 19A (Tc) 35W (Tc) Through Hole TO-220F-3

N-Channel 650V 19A (Tc) 35W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 650 V 19 A MOSFET Transistor
278-FCPF165N65S3L1
N-Channel 650 V 19 A MOSFET Transistor 278-FCPF165N65S3L1
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE Product overview: FCPF165N65S3L1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 19 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 19 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCPF165N65S3L1 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE Product overview: FCPF165N65S3L1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 19 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 19 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCPF165N65S3L1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
- FCPF165N65S3L1 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FCPF165N65S3L1
FCPF165N65S3L1
Power Field-Effect Transistor, 19A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Power Field-Effect Transistor, 19A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Supplier's Site Datasheet
Mosfet, N-Ch, 650V, 19A, To-220F; Transistor Polarity Onsemi - 18AC7310 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 19A, To-220F; Transistor Polarity Onsemi
18AC7310
Mosfet, N-Ch, 650V, 19A, To-220F; Transistor Polarity Onsemi 18AC7310
MOSFET, N-CH, 650V, 19A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 19A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF165N65S3L1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF165N65S3L1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF165N65S3L1
MOSFET N-CH 650V 19A TO220F-3

MOSFET N-CH 650V 19A TO220F-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCPF165N65S3L1
MOSFET FCPF165N65S3L1
MOSFET SuperFET3 650V 165 mOhm, TO220F PKG

MOSFET SuperFET3 650V 165 mOhm, TO220F PKG

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1214449-FCPF165N65S3L1 FCPF165N65S3L1-ND 278-FCPF165N65S3L1 FCPF165N65S3L1 18AC7310 FCPF165N65S3L1 FCPF165N65S3L1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 650 V 19 A MOSFET Transistor Mosfet, N-Ch, 650V, 19A, To-220F; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
PD 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-3; TO-220 -55degC ~ 150degC
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