onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCPF1300N80ZYD

Description
Win Source Part Number: 1123029-FCPF1300N80Z YD Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 24W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Formed Leads Supplier Device Package: TO-220F-3 (Y-Forming) Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-FCPF1300N80ZYD- 488 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1123029-FCPF1300N80ZYD - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCPF1300N80ZYD-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF1300N80ZYD - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 800V, 6A, To-220F; Channel Type Onsemi - 40Y7273 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Win Source Part Number: 1123029-FCPF1300N80Z YD Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 24W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Formed Leads Supplier Device Package: TO-220F-3 (Y-Forming) Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-FCPF1300N80ZYD- 488 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1123029-FCPF1300N80ZYD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1123029-FCPF1300N80ZYD
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1123029-FCPF1300N80ZYD
Win Source Part Number: 1123029-FCPF1300N80Z YD Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 24W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Formed Leads Supplier Device Package: TO-220F-3 (Y-Forming) Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-FCPF1300N80ZYD- 488 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1123029-FCPF1300N80ZYD
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® II
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 24W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Formed Leads
Supplier Device Package: TO-220F-3 (Y-Forming)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-FCPF1300N80ZYD-488
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - FCPF1300N80ZYD-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF1300N80ZYD-ND
Single FETs, MOSFETs FCPF1300N80ZYD-ND
N-Channel 800V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)

N-Channel 800V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF1300N80ZYD - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF1300N80ZYD
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF1300N80ZYD
MOSFET N-CH 800V 4A TO220F-3

MOSFET N-CH 800V 4A TO220F-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCPF1300N80ZYD
MOSFET FCPF1300N80ZYD
MOSFET SF2 800V 1.3OHM E TO220F

MOSFET SF2 800V 1.3OHM E TO220F

Buy Now Datasheet
Mosfet, N-Ch, 800V, 6A, To-220F; Channel Type Onsemi - 40Y7273 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 6A, To-220F; Channel Type Onsemi
40Y7273
Mosfet, N-Ch, 800V, 6A, To-220F; Channel Type Onsemi 40Y7273
MOSFET, N-CH, 800V, 6A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 6A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1123029-FCPF1300N80ZYD FCPF1300N80ZYD-ND FCPF1300N80ZYD FCPF1300N80ZYD 40Y7273
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 800V, 6A, To-220F; Channel Type Onsemi
Polarity N-Channel N-Channel
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack, Formed Leads 880 pF @ 100 V TO-3; TO-220
TJ -55 to 150 C (-67 to 302 F)
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