onsemi Single FETs, MOSFETs FCP7N60

Description
N-Channel 600V 7A (Tc) 83W (Tc) Through Hole TO-220-3
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Description
N-Channel 600V 7A (Tc) 83W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP7N60OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP7N60OS-ND
Single FETs, MOSFETs FCP7N60OS-ND
N-Channel 600V 7A (Tc) 83W (Tc) Through Hole TO-220-3

N-Channel 600V 7A (Tc) 83W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
N-Channel 600V MOSFET Transistor
2088-FCP7N60
N-Channel 600V MOSFET Transistor 2088-FCP7N60
MOSFETs 600V N-Channel SuperFET Product overview: FCP7N60 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP7N60 can be used for catalog matching and distributor lookup.

MOSFETs 600V N-Channel SuperFET Product overview: FCP7N60 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP7N60 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP7N60 - 1037900-FCP7N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP7N60
1037900-FCP7N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP7N60 1037900-FCP7N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037900-FCP7N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 920pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037900-FCP7N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 920pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP7N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP7N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP7N60
MOSFET N-CH 600V 7A TO220-3

MOSFET N-CH 600V 7A TO220-3

Supplier's Site
Mosfet, N, To-220; Transistor Polarity Onsemi - 96K9852 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-220; Transistor Polarity Onsemi
96K9852
Mosfet, N, To-220; Transistor Polarity Onsemi 96K9852
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:83W; RoHS Compliant: Yes

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:83W; RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FCP7N60
MOSFET FCP7N60
MOSFET 600V N-Channel SuperFET

MOSFET 600V N-Channel SuperFET

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCP7N60OS-ND 2088-FCP7N60 1037900-FCP7N60 FCP7N60 96K9852 FCP7N60
Product Name Single FETs, MOSFETs N-Channel 600V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP7N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, To-220; Transistor Polarity Onsemi MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220-3 10V TO-3; TO-220
MOSFET Operating Mode Enhancement
Transconductance 0.0060 kS
PD 83 milliwatts 83000 milliwatts 83000 milliwatts
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