onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP36N60N FCP36N60N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204076-FCP36N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FCP36N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4785pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): STP36N55M5; STP35N65DM2; STP33N60M2; STP38N65M5; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204076-FCP36N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FCP36N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4785pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): STP36N55M5; STP35N65DM2; STP33N60M2; STP38N65M5; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP36N60N - 204076-FCP36N60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP36N60N
204076-FCP36N60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP36N60N 204076-FCP36N60N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204076-FCP36N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FCP36N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4785pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): STP36N55M5; STP35N65DM2; STP33N60M2; STP38N65M5; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204076-FCP36N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Family Name: FCP36N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 112nC @ 10V
Max Input Capacitance: 4785pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): STP36N55M5; STP35N65DM2; STP33N60M2; STP38N65M5;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCP36N60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP36N60N-ND
Single FETs, MOSFETs FCP36N60N-ND
N-Channel 600V 36A (Tc) 312W (Tc) Through Hole TO-220-3

N-Channel 600V 36A (Tc) 312W (Tc) Through Hole TO-220-3

Buy Now Datasheet
 - FCP36N60N - Rochester Electronics
Newburyport, MA, United States
FCP36N60N - Power MOSFET, N-Channel, SUPREMOS, FAST, 600V, 36A, TO-220

FCP36N60N - Power MOSFET, N-Channel, SUPREMOS, FAST, 600V, 36A, TO-220

Supplier's Site Datasheet
Single FETs, MOSFETs - FCP36N60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCP36N60N
Single FETs, MOSFETs FCP36N60N
POWER MOSFET, N-CHANNEL, SUPREMO

POWER MOSFET, N-CHANNEL, SUPREMO

Supplier's Site
Singapore
N-Channel 600V 36A TO-220 MOSFET Transistor
278-FCP36N60N
N-Channel 600V 36A TO-220 MOSFET Transistor 278-FCP36N60N
600V 36A N-Channel Power MOSFET TO-220 90mR Product overview: FCP36N60N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 36A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 36A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP36N60N can be used for catalog matching and distributor lookup.

600V 36A N-Channel Power MOSFET TO-220 90mR Product overview: FCP36N60N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 36A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 36A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP36N60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 600V NChannel MOSFET SupreMOS

MOSFET 600V NChannel MOSFET SupreMOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP36N60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP36N60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP36N60N
MOSFET N-CH 600V 36A TO220-3

MOSFET N-CH 600V 36A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204076-FCP36N60N FCP36N60N-ND FCP36N60N FCP36N60N 278-FCP36N60N FCP36N60N FCP36N60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP36N60N Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 600V 36A TO-220 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 312000 milliwatts 312000 milliwatts 312000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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