N-Channel SuperFET MOSFET 650V 17A TO220
N-Channel SuperFET MOSFET 650V 17A TO220
N-Channel SuperFET MOSFET 650V 17A TO220
Manufacturer: ON Semiconductor
Win Source Part Number: 807489-FCP190N65S3
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 144W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 800
MSL Level: Not Applicable
Rds On (Maximum) at Id, Vgs: 190mOhm at 8.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 400V
Current - Continuous Drain (Id) at 25°C: 17A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 1.7mA
Maximum Vgs: ±30V
N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220-3
MOSFETs SuperFET3 650V 190 mOhm, TO220F PKG Product overview: FCP190N65S3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 190 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 190 mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP190N65S3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 17A TO220-3
MOSFET N-CH 650V 17A TO220-3
MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1724632P | 1723425 | 807489-FCP190N65S3 | FCP190N65S3-ND | 2088-FCP190N65S3 | FCP190N65S3 | FCP190N65S3 | FCP190N65S3 |
| Product Name | MOSFETs | MOSFETs | FETs - Single - FCP190N65S3 | Single FETs, MOSFETs | 650V 190 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220 | TO-220; To-220 | TO-220; SOT3 | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Number of units in IC | 1 | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
