onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP190N60 FCP190N60

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001069-FCP190N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 74nC @ 10V
Max Input Capacitance: 2950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 199 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 800

N-Channel 600V 20.2A (Tc) 208W (Tc) Through Hole TO-220-3

N-Channel MOSFET, 600V, 20.2A, 199mR, TO-220 Product overview: FCP190N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 20.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP190N60 can be used for catalog matching and distributor lookup.

FCP190N60 - Power Field-Effect Transistor, 20.2A, 600V, 0.199ohm, N-Channel, MOSFET, TO-220AB

FCP190N60 - Power Field-Effect Transistor, 20.2A, 600V, 0.199ohm, N-Channel, MOSFET, TO-220AB

MOSFET N-CH 600V 20.2A TO220-3