onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCP165N65S3

Description
Win Source Part Number: 1028018-FCP165N65S3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Power Dissipation (Max): 154W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: FCP165N65S3OS,FCP165 N65S3-ND Base Product Number: FCP165 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1028018-FCP165N65S3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Power Dissipation (Max): 154W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: FCP165N65S3OS,FCP165 N65S3-ND Base Product Number: FCP165 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1028018-FCP165N65S3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1028018-FCP165N65S3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1028018-FCP165N65S3
Win Source Part Number: 1028018-FCP165N65S3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Power Dissipation (Max): 154W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: FCP165N65S3OS,FCP165 N65S3-ND Base Product Number: FCP165 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1028018-FCP165N65S3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® III
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Power Dissipation (Max): 154W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FCP165N65S3OS,FCP165N65S3-ND
Base Product Number: FCP165
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
MOSFETs - 1784676 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1784676
MOSFETs 1784676
SF3 650V 165MOHM E TO220

SF3 650V 165MOHM E TO220

Supplier's Site
MOSFETs - 1784243 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1784243
MOSFETs 1784243
SF3 650V 165MOHM E TO220

SF3 650V 165MOHM E TO220

Supplier's Site
MOSFETs - 1784676P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1784676P
MOSFETs 1784676P
SF3 650V 165MOHM E TO220

SF3 650V 165MOHM E TO220

Supplier's Site
Singapore
N-Channel 650 V 19 A TO-220 MOSFET Transistor
278-FCP165N65S3
N-Channel 650 V 19 A TO-220 MOSFET Transistor 278-FCP165N65S3
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220, 800-TUBE Product overview: FCP165N65S3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 19 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 19 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP165N65S3 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220, 800-TUBE Product overview: FCP165N65S3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 19 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 19 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP165N65S3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FCP165N65S3OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP165N65S3OS-ND
Single FETs, MOSFETs FCP165N65S3OS-ND
N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3

N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Mosfet, N-Ch, 650V, 19A, To-220; Transistor Polarity Onsemi - 62AC6865 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 19A, To-220; Transistor Polarity Onsemi
62AC6865
Mosfet, N-Ch, 650V, 19A, To-220; Transistor Polarity Onsemi 62AC6865
MOSFET, N-CH, 650V, 19A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 19A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP165N65S3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP165N65S3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP165N65S3
MOSFET N-CH 650V 19A TO220-3

MOSFET N-CH 650V 19A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SUPERFET3 650V 19A 165 mOhm

MOSFET SUPERFET3 650V 19A 165 mOhm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1028018-FCP165N65S3 1784676 1784676P 278-FCP165N65S3 FCP165N65S3OS-ND 62AC6865 FCP165N65S3 FCP165N65S3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs MOSFETs N-Channel 650 V 19 A TO-220 MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 650V, 19A, To-220; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
PD 154000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type TO-220; SOT3 TO-220; To-220 TO-220; TO-220 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
MOSFET Operating Mode Enhancement
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