onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP104N60F FCP104N60F

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037891-FCP104N60F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Family Name: FCP104N60F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 37A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 145nC @ 10V
Max Input Capacitance: 6130pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 104 mOhm @ 18.5A, 10V
Alternative Parts (Cross-Reference): STP30N65M5; STP31N65M5; STP33N60M2;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 800

N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3

MOSFET N-Ch 600V 37A SuperFET ll TO220

MOSFET N-Ch 600V 37A SuperFET ll TO220

MOSFET N-Ch 600V 37A SuperFET ll TO220