onsemi Single FETs, MOSFETs FCP099N60E

Description
MOSFET N-CH 600V 37A TO220-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 37A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP099N60E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCP099N60E
Single FETs, MOSFETs FCP099N60E
MOSFET N-CH 600V 37A TO220-3

MOSFET N-CH 600V 37A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FCP099N60E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP099N60E-ND
Single FETs, MOSFETs FCP099N60E-ND
N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3

N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
600V MOSFET Transistor
2088-FCP099N60E
600V MOSFET Transistor 2088-FCP099N60E
MOSFETs SuperFET2 600V Slow version Product overview: FCP099N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP099N60E can be used for catalog matching and distributor lookup.

MOSFETs SuperFET2 600V Slow version Product overview: FCP099N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP099N60E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP099N60E - 774444-FCP099N60E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP099N60E
774444-FCP099N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP099N60E 774444-FCP099N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774444-FCP099N60E Series: SuperFET II Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Family Name: FCP099N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 3.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3465pF @ 380V Vgs (Maximum): ±20V Power Dissipation (Maximum): 357W (Tc) Rds On (Maximum) @ Id, Vgs: 99 mOhm @ 18.5A, 10V Alternative Parts (Cross-Reference): R6524KNX1C10; SiHP33N60E-E3; IPP60R099C6; IPP60R099C6XK; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774444-FCP099N60E
Series: SuperFET II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Family Name: FCP099N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 3.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3465pF @ 380V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 357W (Tc)
Rds On (Maximum) @ Id, Vgs: 99 mOhm @ 18.5A, 10V
Alternative Parts (Cross-Reference): R6524KNX1C10; SiHP33N60E-E3; IPP60R099C6; IPP60R099C6XK;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP099N60E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP099N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP099N60E
MOSFET N-CH 600V 37A TO220-3

MOSFET N-CH 600V 37A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SuperFET2 600V Slow version

MOSFET SuperFET2 600V Slow version

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCP099N60E FCP099N60E-ND 2088-FCP099N60E 774444-FCP099N60E FCP099N60E FCP099N60E
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 600V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP099N60E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 37000 milliamps
PD 357000 milliwatts 357 milliwatts 357000 milliwatts
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