FCH165N60E - Power MOSFET, N-Channel, SUPERFET II
N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247-3
Manufacturer: ON Semiconductor
Win Source Part Number: 714231-FCH165N60E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 227W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 23A
Rds On (Maximum) at Id, Vgs: 165mOhm at 11.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 75nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2434pF at 380V
MOSFET N-CH 600V 23A TO247-3
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
MOSFET N-CH 600V 23A TO247-3
| Rochester Electronics | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FCH165N60E | FCH165N60EOS-ND | 714231-FCH165N60E | FCH165N60E | FCH165N60E | FCH165N60E |
| Product Name | Single FETs, MOSFETs | FETs - Single - FCH165N60E | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| Packing Method | Tube; Tube | Tube; Tube | Tube; Tube | |||
| V(BR)DSS | 600 volts | 600 volts |
