onsemi Single FETs, MOSFETs FCH165N60E

Description
N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247-3
  • Single FETs, MOSFETs - FCH165N60EOS-ND - DigiKey
    DigiKey
  • FCH165N60E - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - FCH165N60E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - FCH165N60E - 714231-FCH165N60E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH165N60E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH165N60EOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH165N60EOS-ND
Single FETs, MOSFETs FCH165N60EOS-ND
N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247-3

N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247-3

Buy Now Datasheet
- FCH165N60E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FCH165N60E
FCH165N60E
FCH165N60E - Power MOSFET, N-Channel, SUPERFET II

FCH165N60E - Power MOSFET, N-Channel, SUPERFET II

Supplier's Site Datasheet
Single FETs, MOSFETs - FCH165N60E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH165N60E
Single FETs, MOSFETs FCH165N60E
MOSFET N-CH 600V 23A TO247-3

MOSFET N-CH 600V 23A TO247-3

Supplier's Site Datasheet
FETs - Single - FCH165N60E - 714231-FCH165N60E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCH165N60E
714231-FCH165N60E
FETs - Single - FCH165N60E 714231-FCH165N60E
Manufacturer: ON Semiconductor Win Source Part Number: 714231-FCH165N60E Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 23A Rds On (Maximum) at Id, Vgs: 165mOhm at 11.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 75nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2434pF at 380V

Manufacturer: ON Semiconductor
Win Source Part Number: 714231-FCH165N60E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 227W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 23A
Rds On (Maximum) at Id, Vgs: 165mOhm at 11.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 75nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2434pF at 380V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH165N60E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH165N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH165N60E
MOSFET N-CH 600V 23A TO247-3

MOSFET N-CH 600V 23A TO247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCH165N60E
MOSFET FCH165N60E
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive

MOSFET 600V 23A N-Chnl SuperFET Easy-Drive

Buy Now Datasheet

Technical Specifications

  DigiKey Rochester Electronics ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCH165N60EOS-ND FCH165N60E FCH165N60E 714231-FCH165N60E FCH165N60E FCH165N60E
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - FCH165N60E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247 TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
Packing Method Tube; Tube Tube; Tube Tube; Tube
Transistor Technology / Material MOSFET (Metal Oxide)
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