onsemi Single FETs, MOSFETs FCH130N60

Description
N-Channel 600V 28A (Tc) 278W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 28A (Tc) 278W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH130N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH130N60-ND
Single FETs, MOSFETs FCH130N60-ND
N-Channel 600V 28A (Tc) 278W (Tc) Through Hole TO-247-3

N-Channel 600V 28A (Tc) 278W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore, Singapore
N-Channel 600V 28A MOSFET Transistor
278-FCH130N60
N-Channel 600V 28A MOSFET Transistor 278-FCH130N60
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247, 450-TUBE Product overview: FCH130N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH130N60 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247, 450-TUBE Product overview: FCH130N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH130N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - FCH130N60 - 1173591-FCH130N60 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCH130N60
1173591-FCH130N60
FETs - Single - FCH130N60 1173591-FCH130N60
Manufacturer: ON Semiconductor Win Source Part Number: 1173591-FCH130N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 278W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 130mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3590pF at 380V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173591-FCH130N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 278W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 28A
Rds On (Maximum) at Id, Vgs: 130mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3590pF at 380V

Buy Now
Sheung Wan, Hong Kong
MOSFET SuperFET2 600V, 130mohm

MOSFET SuperFET2 600V, 130mohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH130N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH130N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH130N60
MOSFET N-CH 600V 28A TO247-3

MOSFET N-CH 600V 28A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCH130N60-ND 278-FCH130N60 1173591-FCH130N60 FCH130N60 FCH130N60
Product Name Single FETs, MOSFETs N-Channel 600V 28A MOSFET Transistor FETs - Single - FCH130N60 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 3590 pF @ 380 V
V(BR)DSS 600 volts
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