onsemi FETs - Single - FCH130N60 FCH130N60

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173591-FCH130N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 278W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 130mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3590pF at 380V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173591-FCH130N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 278W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 130mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3590pF at 380V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FCH130N60 - 1173591-FCH130N60 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCH130N60
1173591-FCH130N60
FETs - Single - FCH130N60 1173591-FCH130N60
Manufacturer: ON Semiconductor Win Source Part Number: 1173591-FCH130N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 278W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 130mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3590pF at 380V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173591-FCH130N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 278W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 28A
Rds On (Maximum) at Id, Vgs: 130mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3590pF at 380V

Buy Now
Single FETs, MOSFETs - FCH130N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH130N60-ND
Single FETs, MOSFETs FCH130N60-ND
N-Channel 600V 28A (Tc) 278W (Tc) Through Hole TO-247-3

N-Channel 600V 28A (Tc) 278W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore, Singapore
N-Channel 600V 28A MOSFET Transistor
278-FCH130N60
N-Channel 600V 28A MOSFET Transistor 278-FCH130N60
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247, 450-TUBE Product overview: FCH130N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH130N60 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247, 450-TUBE Product overview: FCH130N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH130N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SuperFET2 600V, 130mohm

MOSFET SuperFET2 600V, 130mohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH130N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH130N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH130N60
MOSFET N-CH 600V 28A TO247-3

MOSFET N-CH 600V 28A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1173591-FCH130N60 FCH130N60-ND 278-FCH130N60 FCH130N60 FCH130N60
Product Name FETs - Single - FCH130N60 Single FETs, MOSFETs N-Channel 600V 28A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 278000 milliwatts
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