onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCH099N65S3-F155

Description
Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FCH099N65S3-F155 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1018795-FCH099N65S3-F155 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1018795-FCH099N65S3-F155
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1018795-FCH099N65S3-F155
Win Source Part Number: 1018795-FCH099N65S3- F155 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 450 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCH099 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1018795-FCH099N65S3-F155
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® III
Package: Tube
Standard Package: 450
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FCH099
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - FCH099N65S3-F155-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH099N65S3-F155-ND
Single FETs, MOSFETs FCH099N65S3-F155-ND
N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3

N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH099N65S3-F155 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH099N65S3-F155
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3

MOSFET N-CH 650V 30A TO247-3

Supplier's Site
MOSFET SuperFET3 650V 99 mOhm, TO247 PKG

MOSFET SuperFET3 650V 99 mOhm, TO247 PKG

Buy Now Datasheet
Single FETs, MOSFETs - FCH099N65S3-F155 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH099N65S3-F155
Single FETs, MOSFETs FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3

MOSFET N-CH 650V 30A TO247-3

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCH099N65S3-F155 1018795-FCH099N65S3-F155 FCH099N65S3-F155-ND FCH099N65S3-F155 FCH099N65S3-F155 FCH099N65S3-F155
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
rDS(on) 0.0990 ohms
Package Type TO-247; TO-247 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
Packing Method Tube; Tube Tube; Tube
PD 227000 milliwatts 227000 milliwatts
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