onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCH099N65S3-F155

Description
Win Source Part Number: 1018795-FCH099N65S3- F155 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 450 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCH099 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1018795-FCH099N65S3-F155 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCH099N65S3-F155-ND - DigiKey
    DigiKey
  • FCH099N65S3-F155 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH099N65S3-F155 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - FCH099N65S3-F155 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Win Source Part Number: 1018795-FCH099N65S3- F155 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 450 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCH099 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1018795-FCH099N65S3-F155 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1018795-FCH099N65S3-F155
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1018795-FCH099N65S3-F155
Win Source Part Number: 1018795-FCH099N65S3- F155 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® III Package: Tube Standard Package: 450 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FCH099 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1018795-FCH099N65S3-F155
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® III
Package: Tube
Standard Package: 450
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FCH099
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - FCH099N65S3-F155-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH099N65S3-F155-ND
Single FETs, MOSFETs FCH099N65S3-F155-ND
N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3

N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3

Buy Now Datasheet
- FCH099N65S3-F155 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FCH099N65S3-F155
FCH099N65S3-F155
Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH099N65S3-F155 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH099N65S3-F155
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3

MOSFET N-CH 650V 30A TO247-3

Supplier's Site
Single FETs, MOSFETs - FCH099N65S3-F155 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH099N65S3-F155
Single FETs, MOSFETs FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3

MOSFET N-CH 650V 30A TO247-3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCH099N65S3-F155
MOSFET FCH099N65S3-F155
MOSFET SuperFET3 650V 99 mOhm, TO247 PKG

MOSFET SuperFET3 650V 99 mOhm, TO247 PKG

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1018795-FCH099N65S3-F155 FCH099N65S3-F155-ND FCH099N65S3-F155 FCH099N65S3-F155 FCH099N65S3-F155 FCH099N65S3-F155
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 227000 milliwatts 227000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247 TO-247; TO-247-3 TO-247; TO-247-3
rDS(on) 0.0990 ohms
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