Manufacturer: ON Semiconductor
Win Source Part Number: 1173579-FCH072N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 481W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 52A
Rds On (Maximum) at Id, Vgs: 72mOhm at 26A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5890pF at 380V
FCH072N60 - Power Field-Effect Transistor, 52A, 600V, 0.072ohm, N-Channel, MOSFET, TO-247AB
FCH072N60 - Power Field-Effect Transistor, 52A, 600V, 0.072ohm, N-Channel, MOSFET, TO-247AB
N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 52A TO247-3
| Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1173579-FCH072N60 | FCH072N60 | FCH072N60-ND | FCH072N60 | FCH072N60 |
| Product Name | FETs - Single - FCH072N60 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | ||||
| PD | 481000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
