onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA76N60N FCA76N60N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204062-FCA76N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 543W (Tc) Family Name: FCA76N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 285nC @ 10V Max Input Capacitance: 12385pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 36 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): TK62N60W; TK62N60W5; TK62N60W,S1VF; Introduction Date: April 30, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204062-FCA76N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 543W (Tc) Family Name: FCA76N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 285nC @ 10V Max Input Capacitance: 12385pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 36 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): TK62N60W; TK62N60W5; TK62N60W,S1VF; Introduction Date: April 30, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA76N60N - 204062-FCA76N60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA76N60N
204062-FCA76N60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA76N60N 204062-FCA76N60N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204062-FCA76N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 543W (Tc) Family Name: FCA76N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 285nC @ 10V Max Input Capacitance: 12385pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 36 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): TK62N60W; TK62N60W5; TK62N60W,S1VF; Introduction Date: April 30, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204062-FCA76N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 543W (Tc)
Family Name: FCA76N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 285nC @ 10V
Max Input Capacitance: 12385pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 36 mOhm @ 38A, 10V
Alternative Parts (Cross-Reference): TK62N60W; TK62N60W5; TK62N60W,S1VF;
Introduction Date: April 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FCA76N60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCA76N60N-ND
Single FETs, MOSFETs FCA76N60N-ND
N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN

N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN

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Single FETs, MOSFETs - 1990-FCA76N60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1990-FCA76N60N-ND
Single FETs, MOSFETs 1990-FCA76N60N-ND
N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN

N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN

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Sheung Wan, Hong Kong
MOSFET SUPREMOS 76A IN TO3P

MOSFET SUPREMOS 76A IN TO3P

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCA76N60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCA76N60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCA76N60N
MOSFET N-CH 600V 76A TO3PN

MOSFET N-CH 600V 76A TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204062-FCA76N60N FCA76N60N-ND FCA76N60N FCA76N60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA76N60N Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 543000 milliwatts
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