onsemi Single FETs, MOSFETs FCA76N60N

N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN

N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN

600V 76A N-Channel Power MOSFET, 36mΩ RdsOn Product overview: FCA76N60N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCA76N60N can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204062-FCA76N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 543W (Tc)
Family Name: FCA76N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 285nC @ 10V
Max Input Capacitance: 12385pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 36 mOhm @ 38A, 10V
Alternative Parts (Cross-Reference): TK62N60W; TK62N60W5; TK62N60W,S1VF;
Introduction Date: April 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 450