Enhancement mode gallium nitride (GaN) HEMT transistor in a PDSO-N8 package measuring 5.00x6.00x0.87 mm, designed for high-density power applications including synchronous rectifiers, DC-DC converters, and motor drivers. It features a 40 V drain-to-source voltage rating, a typical on-resistance of 0.5 mΩ at 819 A continuous drain current at 25 °C, and a figure of merit QG×RDS(ON) of 27 nC·mΩ. The device has a low gate charge of 52 nC, enabling high-speed switching, and is RoHS compliant. Thermal resistance from junction to case is 0.1 °C/W.
GAN FET 40V, 0.5M, 5X6 LGA
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 488-ENGNTLEF0D7N04GN1TXG-ND |
| Product Name | Single FETs, MOSFETs |
