Power Field-Effect Transistor
Manufacturer: ON Semiconductor
Win Source Part Number: 1036330-EMH2412-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-EMH
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 6A
Max Gate Charge: 6.3nC @ 4.5V
Maximum Rds On at Id,Vgs: 27 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EMH2412-TL-H | 1036330-EMH2412-TL-H |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H | |
| Package Type | SMD8 | SOT3; 8-EMH |
| Polarity | N-Channel | |
| V(BR)DSS | 24 volts |