onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H EMH2412-TL-H

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1036330-EMH2412-TL-H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-EMH Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 6A Max Gate Charge: 6.3nC @ 4.5V Maximum Rds On at Id,Vgs: 27 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H - 1036330-EMH2412-TL-H - Win Source Electronics
    Win Source Electronics
  • EMH2412-TL-H - Rochester Electronics
    Rochester Electronics
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1036330-EMH2412-TL-H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-EMH Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 6A Max Gate Charge: 6.3nC @ 4.5V Maximum Rds On at Id,Vgs: 27 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H - 1036330-EMH2412-TL-H - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H
1036330-EMH2412-TL-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H 1036330-EMH2412-TL-H
Manufacturer: ON Semiconductor Win Source Part Number: 1036330-EMH2412-TL-H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-EMH Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 6A Max Gate Charge: 6.3nC @ 4.5V Maximum Rds On at Id,Vgs: 27 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1036330-EMH2412-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-EMH
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 6A
Max Gate Charge: 6.3nC @ 4.5V
Maximum Rds On at Id,Vgs: 27 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- EMH2412-TL-H - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
EMH2412-TL-H
EMH2412-TL-H
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number 1036330-EMH2412-TL-H EMH2412-TL-H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - EMH2412-TL-H
Polarity N-Channel
V(BR)DSS 24 volts
PD 1400 milliwatts
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