Manufacturer: ON Semiconductor
Win Source Part Number: 800701-EFC8811R-TF
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Power - Max: 2.5W
Supplier Device Package: 6-CSP (1.77x3.54)
Temperature Range - Operating: 150°C
Manufacturer Package: 6-SMD, No Lead
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Mosfet Array 2 N-Channel (Dual) Common Drain 2.5W Surface Mount 6-CSP (1.77x3.54)
Mosfet Array 2 N-Channel (Dual) Common Drain 2.5W Surface Mount 6-CSP (1.77x3.54)
Dual N-Channel Power MOSFET for 1-Cell Lithium-ion Battery Protection, 12 V, 27 A, 3.2 mΩ, 5000-REEL Product overview: EFC8811R-TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 12 V, 27 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 12 V, 27 A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EFC8811R-TF can be used for catalog matching and distributor lookup.
MOSFET, DUAL N-CH, 12V, 27A, CSP-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.3V; Power RoHS Compliant: Yes
MOSFET 2N-CH 6CSP
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | EFC8811R-TF | 800701-EFC8811R-TF | EFC8811R-TFOSCT-ND | 289-EFC8811R-TF | 08AC2649 | EFC8811R-TF | EFC8811R-TF |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - EFC8811R-TF | FET, MOSFET Arrays | N-Channel Dual 12 V 27 A MOSFET Transistor | Mosfet, Dual N-Ch, 12V, 27A, Csp-6; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) Common Drain | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||||
| Package Type | 6-SMD, No Lead | SOT3 | 6-SMD, No Lead | TO-3 |
