Manufacturer: ON Semiconductor
Win Source Part Number: 1035899-EFC6602R-TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-EFCP (2.7x1.81)
Maximum Power Dissipation: 2W
Max Gate Charge: 55nC @ 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs
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EFC6602R - N-Channel Power MOSFET, 12V, 18A, 5.9mOhm, Dual EFCP
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MOSFET NCH+NCH 2.5V DRIVE SERIES
| Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1035899-EFC6602R-TR | EFC6602R-TROSTR-ND | EFC6602R-TR | EFC6602R-TR | EFC6602R-TR |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6602R-TR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel |
