onsemi FET, MOSFET Arrays EFC6602R-TR

Description
Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - EFC6602R-TROSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
EFC6602R-TROSTR-ND
FET, MOSFET Arrays EFC6602R-TROSTR-ND
Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Buy Now Datasheet
 - EFC6602R-TR - Rochester Electronics
Newburyport, MA, United States
EFC6602R - N-Channel Power MOSFET, 12V, 18A, 5.9mOhm, Dual EFCP

EFC6602R - N-Channel Power MOSFET, 12V, 18A, 5.9mOhm, Dual EFCP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6602R-TR - 1035899-EFC6602R-TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6602R-TR
1035899-EFC6602R-TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6602R-TR 1035899-EFC6602R-TR
Manufacturer: ON Semiconductor Win Source Part Number: 1035899-EFC6602R-TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-EFCP (2.7x1.81) Maximum Power Dissipation: 2W Max Gate Charge: 55nC @ 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Quantity per package: 5k pcs

Manufacturer: ON Semiconductor
Win Source Part Number: 1035899-EFC6602R-TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-EFCP (2.7x1.81)
Maximum Power Dissipation: 2W
Max Gate Charge: 55nC @ 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs

Buy Now Datasheet
Singapore
N-Channel Dual 12 V 18 A MOSFET Transistor
289-EFC6602R-TR
N-Channel Dual 12 V 18 A MOSFET Transistor 289-EFC6602R-TR
Power MOSFET for 1-Cell Lithium-ion Battery Protection, 12 V, 5.9 mΩ, 18 A, Dual N-Channel, WLCSP 6 Lead 2.7x1.81 / EFCP2718-6CE-020, 5000-REEL Product overview: EFC6602R-TR from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 12 V, 18 A, WLCSP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 12 V, 18 A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EFC6602R-TR can be used for catalog matching and distributor lookup.

Power MOSFET for 1-Cell Lithium-ion Battery Protection, 12 V, 5.9 mΩ, 18 A, Dual N-Channel, WLCSP 6 Lead 2.7x1.81 / EFCP2718-6CE-020, 5000-REEL Product overview: EFC6602R-TR from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 12 V, 18 A, WLCSP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 12 V, 18 A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EFC6602R-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET NCH+NCH 2.5V DRIVE SERIES

MOSFET NCH+NCH 2.5V DRIVE SERIES

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - EFC6602R-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
EFC6602R-TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs EFC6602R-TR
MOSFET 2N-CH EFCP2718

MOSFET 2N-CH EFCP2718

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number EFC6602R-TROSTR-ND EFC6602R-TR 1035899-EFC6602R-TR 289-EFC6602R-TR EFC6602R-TR EFC6602R-TR
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6602R-TR N-Channel Dual 12 V 18 A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-XFBGA, FCBGA XFBGA6 SOT3; 6-EFCP (2.7x1.81)
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