onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6601R-TR EFC6601R-TR

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1035898-EFC6601R-TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-EFCP (2.7x1.81) Maximum Power Dissipation: 2W Max Gate Charge: 48nC @ 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1035898-EFC6601R-TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-EFCP (2.7x1.81) Maximum Power Dissipation: 2W Max Gate Charge: 48nC @ 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6601R-TR - 1035898-EFC6601R-TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6601R-TR
1035898-EFC6601R-TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6601R-TR 1035898-EFC6601R-TR
Manufacturer: ON Semiconductor Win Source Part Number: 1035898-EFC6601R-TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-EFCP (2.7x1.81) Maximum Power Dissipation: 2W Max Gate Charge: 48nC @ 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1035898-EFC6601R-TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-EFCP (2.7x1.81)
Maximum Power Dissipation: 2W
Max Gate Charge: 48nC @ 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - EFC6601R-TROSDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
EFC6601R-TROSDKR-ND
FET, MOSFET Arrays EFC6601R-TROSDKR-ND
Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Buy Now Datasheet
FET, MOSFET Arrays - EFC6601R-TROSCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
EFC6601R-TROSCT-ND
FET, MOSFET Arrays EFC6601R-TROSCT-ND
Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Buy Now Datasheet
FET, MOSFET Arrays - EFC6601R-TROSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
EFC6601R-TROSTR-ND
FET, MOSFET Arrays EFC6601R-TROSTR-ND
Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

Buy Now Datasheet
Singapore
N-Channel Dual 24V 13A MOSFET Transistor
289-EFC6601R-TR
N-Channel Dual 24V 13A MOSFET Transistor 289-EFC6601R-TR
Dual N-Channel Power MOSFET, 24V, 13A, 11.5mΩ, WLCSP 6 Lead 2.7x1.81 / EFCP2718-6CE-020, 5000-REEL Product overview: EFC6601R-TR from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 24V, 13A, WLCSP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 24V, 13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EFC6601R-TR can be used for catalog matching and distributor lookup.

Dual N-Channel Power MOSFET, 24V, 13A, 11.5mΩ, WLCSP 6 Lead 2.7x1.81 / EFCP2718-6CE-020, 5000-REEL Product overview: EFC6601R-TR from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 24V, 13A, WLCSP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 24V, 13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EFC6601R-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Dual N-Ch, 24Vss, 13A, Efcp; Transistor Polarity Onsemi - 13AC3386 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 24Vss, 13A, Efcp; Transistor Polarity Onsemi
13AC3386
Mosfet, Dual N-Ch, 24Vss, 13A, Efcp; Transistor Polarity Onsemi 13AC3386
MOSFET, DUAL N-CH, 24VSS, 13A, EFCP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:-; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation RoHS Compliant: Yes

MOSFET, DUAL N-CH, 24VSS, 13A, EFCP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:-; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - EFC6601R-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
EFC6601R-TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs EFC6601R-TR
MOSFET 2N-CH EFCP2718

MOSFET 2N-CH EFCP2718

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NCH+NCH 2.5V DRIVE SERIES

MOSFET NCH+NCH 2.5V DRIVE SERIES

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1035898-EFC6601R-TR EFC6601R-TROSDKR-ND 289-EFC6601R-TR 13AC3386 EFC6601R-TR EFC6601R-TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6601R-TR FET, MOSFET Arrays N-Channel Dual 24V 13A MOSFET Transistor Mosfet, Dual N-Ch, 24Vss, 13A, Efcp; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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