Power Field-Effect Transistor
Manufacturer: ON Semiconductor
Win Source Part Number: 080917-EFC4615R-TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: EFCP1515-4CC-037
Dimension: 4-XBGA, 4-FCBGA
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 1mA
Max Gate Charge: 8.8nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 31 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
N-Channel 24V 6A (Ta) 1.6W (Ta) Surface Mount EFCP1515-4CC-037
MOSFET N-CH 24V 6A EFCP
| ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | EFC4615R-TR | EFC4615R-TR | 080917-EFC4615R-TR | 488-EFC4615R-TR-ND | EFC4615R-TR | EFC4615R-TR |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC4615R-TR | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 24 volts | 24 volts | ||||
| IDSS | 6000 milliamps |
