onsemi ECH8674-TL-H

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
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Datasheet
Datasheet Summary
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The ECH8674-TL-H is a P-channel power MOSFET in an ECH8 package, designed for high-density mounting with dual integrated devices. It operates at a maximum drain-to-source voltage of -12V and handles a continuous drain current of -5A, with an on-state resistance of 41mΩ at -4.5V gate drive. The device supports 1.8V logic-level drive and includes an integrated protection diode. It is rated for a maximum channel temperature of 150°C and dissipates up to 1.3W when mounted on a 1200mm²×0.8mm ceramic substrate. The package measures 8.2mm × 5.2mm with a 0.65mm pitch, and the device is halogen-free and RoHS compliant. It meets AEC-Q200 automotive qualifications.

Datasheet Summary
Powered by GS/AI

The ECH8674-TL-H is a P-channel power MOSFET in an ECH8 package, designed for high-density mounting with dual integrated devices. It operates at a maximum drain-to-source voltage of -12V and handles a continuous drain current of -5A, with an on-state resistance of 41mΩ at -4.5V gate drive. The device supports 1.8V logic-level drive and includes an integrated protection diode. It is rated for a maximum channel temperature of 150°C and dissipates up to 1.3W when mounted on a 1200mm²×0.8mm ceramic substrate. The package measures 8.2mm × 5.2mm with a 0.65mm pitch, and the device is halogen-free and RoHS compliant. It meets AEC-Q200 automotive qualifications.

Suppliers

Company
Product
Description
Supplier Links
 - ECH8674-TL-H - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number ECH8674-TL-H
Package Type SMD8
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