Power Field-Effect Transistor
Manufacturer: ON Semiconductor
Win Source Part Number: 015143-ECH8653-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Max Gate Charge: 18.5nC @ 8V
Max Input Capacitance: 1280pF @ 10V
Maximum Rds On at Id,Vgs: 20 mOhm @ 4A, 8V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 7.5A 8ECH
| Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ECH8653-TL-H | 015143-ECH8653-TL-H | ECH8653-TL-H |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8653-TL-H | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | SMD8 | SOT3; 8-ECH | |
| Polarity | N-Channel | ||
| V(BR)DSS | 20 volts |
