onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410-TL-H ECH8410-TL-H

Description
Manufacturer: ON Semiconductor Win Source Part Number: 203509-ECH8410-TL-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-ECH Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410-TL-H - 203509-ECH8410-TL-H - Win Source Electronics
    Win Source Electronics
  • ECH8410-TL-H - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ECH8410-TL-H - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 203509-ECH8410-TL-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-ECH Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410-TL-H - 203509-ECH8410-TL-H - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410-TL-H
203509-ECH8410-TL-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410-TL-H 203509-ECH8410-TL-H
Manufacturer: ON Semiconductor Win Source Part Number: 203509-ECH8410-TL-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-ECH Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 203509-ECH8410-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1700pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- ECH8410-TL-H - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
ECH8410-TL-H
ECH8410-TL-H
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ECH8410-TL-H - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ECH8410-TL-H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ECH8410-TL-H
MOSFET N-CH 30V 12A 8ECH

MOSFET N-CH 30V 12A 8ECH

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 203509-ECH8410-TL-H ECH8410-TL-H ECH8410-TL-H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410-TL-H Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 1600 milliwatts
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