onsemi Single FETs, MOSFETs CPH3360-TL-W

Description
P-Channel 30V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH
Request a Quote Datasheet
Description
P-Channel 30V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - CPH3360-TL-WOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
CPH3360-TL-WOSTR-ND
Single FETs, MOSFETs CPH3360-TL-WOSTR-ND
P-Channel 30V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH

P-Channel 30V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3360-TL-W - 1030148-CPH3360-TL-W - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3360-TL-W
1030148-CPH3360-TL-W
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3360-TL-W 1030148-CPH3360-TL-W
Manufacturer: ON Semiconductor Win Source Part Number: 1030148-CPH3360-TL-W Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 900mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-CPH Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 2.2nC @ 10V Max Input Capacitance: 82pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 303 mOhm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1030148-CPH3360-TL-W
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 900mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-CPH
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 2.6V @ 1mA
Max Gate Charge: 2.2nC @ 10V
Max Input Capacitance: 82pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 303 mOhm @ 800mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - CPH3360-TL-W - Rochester Electronics
Newburyport, MA, United States
P-Channel Power MOSFET, 30V

P-Channel Power MOSFET, 30V

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CPH3360-TL-W - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CPH3360-TL-W
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CPH3360-TL-W
MOSFET P-CH 30V 1.6A 3CPH

MOSFET P-CH 30V 1.6A 3CPH

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number CPH3360-TL-WOSTR-ND 1030148-CPH3360-TL-W CPH3360-TL-W CPH3360-TL-W
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3360-TL-W Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; 3-CPH SOT23; SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 30 volts
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