The CAT93C86BVI-GT3 is a 16-Kb Serial EEPROM memory device from Lingto Electronic Limited, designed for high-speed operation with a clock frequency of up to 4 MHz at 5 V and 2 MHz at 1.8 V. It supports a supply voltage range from 1.8 V to 5.5 V and offers selectable memory organization in either 8-bit or 16-bit formats, depending on the ORG pin configuration. The device features a self-timed write cycle with auto-clear, ensuring efficient data management. Additional characteristics include hardware and software write protection, power-up inadvertent write protection, and low power consumption due to its CMOS technology. The CAT93C86BVI-GT3 is rated for 1,000,000 program/erase cycles and has a data retention period of up to 100 years, making it suitable for long-term applications. It is available in multiple package options, including 8-pin SOIC, TSSOP, and UDFN, and complies with RoHS standards. This device is suitable for industrial and extended temperature range applications, operating from -40¬8C to +125¬8C.
EEPROM Memory IC 16Kb (1K x 16, 2K x 8) Microwire, SPI 4MHz 100ns 8-SOIC
IC EEPROM 16KBIT MICROWIRE 8SOIC
IC EEPROM 16KBIT MICROWIRE 8SOIC
EEPROM Serial 16-Kb Microwire, SOIC 8, 150 mils, 3000-REEL Product overview: CAT93C86BVI-GT3 from onsemi is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOIC. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, SOIC, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CAT93C86BVI-GT3 can be used for catalog matching and distributor lookup.
EEPROM Serial 16-Kb Microwire
IC EEPROM 16KBIT MICROWIRE 8SOIC
16KB MICROWIRE SER EEPROM
EEPROM Memory IC 16Kbit Microwire 4 MHz 100 ns 8-SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 488-CAT93C86BVI-GT3TR-ND | 774-CAT93C86BVI-GT3 | CAT93C86BVI-GT3 | CAT93C86BVI-GT3 | CAT93C86BVI-GT3 | CAT93C86BVI-GT3 | CAT93C86BVI-GT3 |
| Product Name | Memory | SOIC Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Memory | |
| Memory Category | EEPROM | EEPROM | EEPROM | EEPROM; Non-Volatile | EEPROM; EEPROM | EEPROM; EEPROM | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | ||||
| Package Type | SOIC; "8-SOIC (0.154"", 3.90mm Width)" | SOIC; SOIC 8, 150 mils | SOIC | SOIC; 8-SOIC (0.154\", 3.90mm Width) | |||
| Supply Voltage | 1.8V ~ 5.5V | -3.3V; 1.65 | -40degC ~ 85degC (TA) | 1.8V ~ 5.5V | |||
| Access Time | 100 ns | 100 ns | 100 ns |
