4Kb Serial EEPROM MICROWIRE SOIC 8 2MHz 5.5V Product overview: CAT93C66VI-G from onsemi is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4Kb, 2MHz, 5.5V, SOIC. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 4Kb, 2MHz, 5.5V, SOIC, Memory IC and Storage Component. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CAT93C66VI-G can be used for catalog matching and distributor lookup.
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 2MHz 8-SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 134909-CAT93C66VI-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 8-SOIC
Supply Voltage - Operating: 1.8 V to 5.5 V
Memory Format: EEPROM
Max Frequency: 2MHz
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 100
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| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-CAT93C66VI-G | CAT93C66VI-GOS-ND | 134909-CAT93C66VI-G | CAT93C66VI-G | CAT93C66VI-G | CAT93C66VI-G |
| Product Name | 4Kb 2MHz 5.5V SOIC Memory IC and Storage Component | Memory | Memory - EEPROM - CAT93C66VI-G | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | EEPROM | EEPROM | EEPROM; EEPROM | EEPROM; EEPROM | EEPROM; EEPROM | EEPROM; Non-Volatile |
| Access Time | 250 ns | |||||
| Data Retention | 100 years | |||||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 4 kbits | 4 kbits | 4 kbits | 4 kbits |
