onsemi Memory CAT93C46VI-TE13

Description
EEPROM Memory IC 1Kbit Microwire 2 MHz 250 ns 8-SOIC
Datasheet
Description
EEPROM Memory IC 1Kbit Microwire 2 MHz 250 ns 8-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT93C46VI-TE13 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 2 MHz 250 ns 8-SOIC

EEPROM Memory IC 1Kbit Microwire 2 MHz 250 ns 8-SOIC

Buy Now
Memory - CAT93C46VI-TE13 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 2 MHz 8-SOIC

EEPROM Memory IC 1Kbit Microwire 2 MHz 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT93C46VI-TE13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT93C46VI-TE13
Integrated Circuits (ICs) - Memory - Memory CAT93C46VI-TE13
IC EEPROM 1KBIT MICROWIRE 8SOIC

IC EEPROM 1KBIT MICROWIRE 8SOIC

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number CAT93C46VI-TE13 CAT93C46VI-TE13 CAT93C46VI-TE13
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 250 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1 kbits 1 kbits 1 kbits
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