onsemi Memory CAT93C46BVI-G

Description
Memory IC
Datasheet
Description
Memory IC
Datasheet

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Product
Description
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Memory - CAT93C46BVI-G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

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Memory - CAT93C46BVI-G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 4 MHz 8-SOIC

EEPROM Memory IC 1Kbit Microwire 4 MHz 8-SOIC

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Memory - CAT93C46BVI-G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 4 MHz 250 ns 8-SOIC

EEPROM Memory IC 1Kbit Microwire 4 MHz 250 ns 8-SOIC

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
CAT93C46BVI-G
Integrated Circuits (ICs) - Memory - Memory CAT93C46BVI-G
IC

IC

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Technical Specifications

  Quarktwin Technology Ltd. Quarktwin Technology Ltd. Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number CAT93C46BVI-G CAT93C46BVI-G CAT93C46BVI-G CAT93C46BVI-G
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1 kbits 1 kbits
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