onsemi Memory CAT28LV256NI-30

Description
EEPROM Memory IC 256Kbit Parallel 300 ns 32-PLCC (13.97x11.43)
Description
EEPROM Memory IC 256Kbit Parallel 300 ns 32-PLCC (13.97x11.43)
Datasheet
Datasheet Summary
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The CAT28LV256NI-30 is a 256K-bit CMOS parallel EEPROM organized as 32K x 8 bits, designed for low power consumption with a supply voltage range of 3.0V to 3.6V. It features read access times of 300 ns and a maximum active current of 15 mA, with a standby current of 150 µA. The device supports simple write operations through on-chip address and data latches, and it includes a self-timed write cycle with an auto-clear function, allowing for a fast write cycle time of 10 ms maximum. This EEPROM is suitable for commercial, industrial, and automotive applications, with a reliability specification of 100,000 program/erase cycles and a data retention period of up to 100 years. The CAT28LV256NI-30 is available in multiple package types, including 28-pin DIP, 28-pin TSOP, and 32-pin PLCC, making it versatile for various design requirements. Additionally, it incorporates hardware and software write protection features, enhancing data integrity during operation.

Datasheet Summary
Powered by GS/AI

The CAT28LV256NI-30 is a 256K-bit CMOS parallel EEPROM organized as 32K x 8 bits, designed for low power consumption with a supply voltage range of 3.0V to 3.6V. It features read access times of 300 ns and a maximum active current of 15 mA, with a standby current of 150 µA. The device supports simple write operations through on-chip address and data latches, and it includes a self-timed write cycle with an auto-clear function, allowing for a fast write cycle time of 10 ms maximum. This EEPROM is suitable for commercial, industrial, and automotive applications, with a reliability specification of 100,000 program/erase cycles and a data retention period of up to 100 years. The CAT28LV256NI-30 is available in multiple package types, including 28-pin DIP, 28-pin TSOP, and 32-pin PLCC, making it versatile for various design requirements. Additionally, it incorporates hardware and software write protection features, enhancing data integrity during operation.

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28LV256NI-30 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 300 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit Parallel 300 ns 32-PLCC (13.97x11.43)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - CAT28LV256NI-30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
CAT28LV256NI-30
Integrated Circuits (ICs) - Memory CAT28LV256NI-30
IC EEPROM 256KBIT PAR 32PLCC

IC EEPROM 256KBIT PAR 32PLCC

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CAT28LV256NI-30 CAT28LV256NI-30
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 300 ns 300 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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