onsemi Memory CAT28F001G-12TT

Description
FLASH Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (11.43x13.97)
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Description
FLASH Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (11.43x13.97)
Request a Quote
Datasheet
Datasheet Summary
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The CAT28F001G-12TT is a 1 Megabit CMOS Boot Block Flash Memory designed for applications requiring in-system or after-sale code updates. It features a fast read access time of 120 ns and a blocked architecture that includes one 8 KB Boot Block, two 4 KB Parameter Blocks, and one 112 KB Main Block. The Boot Block can be positioned at either the top or bottom of the memory map and includes a write lock-out feature to ensure data integrity. This memory operates at a programming and erase voltage of 12.0V ± 5% and supports automated program and erase algorithms, making it suitable for high-speed programming. It is available in various temperature ranges, including commercial, industrial, and automotive, and is designed to endure 100,000 program/erase cycles with a data retention period of up to 10 years. The device is offered in JEDEC standard pinouts, including 32-pin DIP, PLCC, and TSOP packages, and includes features such as hardware data protection and an electronic signature for device identification.

Datasheet Summary
Powered by GS/AI

The CAT28F001G-12TT is a 1 Megabit CMOS Boot Block Flash Memory designed for applications requiring in-system or after-sale code updates. It features a fast read access time of 120 ns and a blocked architecture that includes one 8 KB Boot Block, two 4 KB Parameter Blocks, and one 112 KB Main Block. The Boot Block can be positioned at either the top or bottom of the memory map and includes a write lock-out feature to ensure data integrity. This memory operates at a programming and erase voltage of 12.0V ± 5% and supports automated program and erase algorithms, making it suitable for high-speed programming. It is available in various temperature ranges, including commercial, industrial, and automotive, and is designed to endure 100,000 program/erase cycles with a data retention period of up to 10 years. The device is offered in JEDEC standard pinouts, including 32-pin DIP, PLCC, and TSOP packages, and includes features such as hardware data protection and an electronic signature for device identification.

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28F001G-12TT-ND - DigiKey
Thief River Falls, MN, United States
FLASH Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (11.43x13.97)

FLASH Memory IC 1Mb (128K x 8) Parallel 120ns 32-PLCC (11.43x13.97)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CAT28F001G-12TT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CAT28F001G-12TT
Integrated Circuits (ICs) - Memory - Memory CAT28F001G-12TT
IC FLASH 1MBIT PARALLEL 32PLCC

IC FLASH 1MBIT PARALLEL 32PLCC

Supplier's Site
Memory - CAT28F001G-12TT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 1Mbit Parallel 120 ns 32-PLCC (11.43x13.97)

FLASH Memory IC 1Mbit Parallel 120 ns 32-PLCC (11.43x13.97)

Buy Now Datasheet
IC FLASH 1MBIT PARALLEL 32PLCC

IC FLASH 1MBIT PARALLEL 32PLCC

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number CAT28F001G-12TT-ND CAT28F001G-12TT CAT28F001G-12TT CAT28F001G-12TT
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type 32-LCC (J-Lead) 32-LCC (J-Lead)
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