onsemi Single Bipolar Transistors BUV27G

TRANS NPN 120V 12A TO220

Bipolar (BJT) Transistor NPN 120V 12A 70W Through Hole TO-220

Manufacturer: ON Semiconductor
Win Source Part Number: 100645-BUV27G
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 1.5V @ 800mA, 8A
Maximum Power Dissipation: 70W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

12 A, 120 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: BUV27G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 A, 120 V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 12 A, 120 V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BUV27G can be used for catalog matching and distributor lookup.