10 Amp, 450 V NPN Power Bipolar Transistor
Bipolar (BJT) Transistor NPN 450V 5A 40W Through Hole TO-220F-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1025450-BUT11AFTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1.5V @ 500mA, 2.5A
Collector Cut-off Current(Max): 1mA
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
Bipolar Transistors - BJT NPN Si Transistor Product overview: BUT11AFTU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BUT11AFTU can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT NPN Si Transistor
TRANS NPN 450V 5A TO220F-3
TRANS NPN 450V 5A TO220F-3
TRANSISTOR, BIPOL, NPN, 450V, TO-220F-3, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:450V, TRANSITION FREQUENCY FT:-, POWER DISSIPATION PD:40W, DC COLLECTOR CURRENT:5A, DC CURRENT GAIN HFE:-, NO. OF PINS:3PINS, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Rochester Electronics | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | BUT11AFTU | BUT11AFTUFS-ND | 1025450-BUT11AFTU | 2087-BUT11AFTU | BUT11AFTU | BUT11AFTU | BUT11AFTU | 49259929 |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BUT11AFTU | Bipolar Transistor | Bipolar Transistors - BJT | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor | |
| Package Type | TO-220; TO-220-3 FullPak | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220F | Tube | TO-220; TO-220-3 Full Pack | |||
| Packing Method | Tube; Tube | Tube | Tube; Tube | |||||
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | ||||
| IC(max) | 5000 milliamps | 5000 milliamps | 5000 milliamps |
