onsemi Single Bipolar Transistors BU806

The BU806 is an NPN epitaxial silicon Darlington transistor designed for high voltage and fast switching applications, such as horizontal output stages in CRT video displays. It is packaged in a TO-220-3 case with dimensions of 10.00 ±0.20 mm in length, 4.50 ±0.20 mm in width, and 1.27 ±0.10 mm in lead spacing. The part has a collector-emitter voltage rating of 200 V, a continuous collector current of 8 A, and a maximum collector dissipation of 60 W at 25°C. It features a built-in speed-up diode between base and emitter and meets the AEC-Q200 automotive qualification standard. The junction and storage temperature range is -55°C to 150°C.