onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138_G BSS138_G

Manufacturer: ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1116130-BSS138_G
Drain to Source Voltage (Vdss): 50 V
Power Dissipation: 360 mW
Height: 1.11 mm
Number of Channels: 1
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-23
Alternative Parts (Cross-Reference): BSS 138G; BSS138-G; BSS138G;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
RoHS: Compliant
Min Operating Temperature: -55 °C
Turn-On Delay Time: 2.5 ns
Max Operating Temperature: 150 °C
Max Junction Temperature (Tj): 150 °C
Continuous Drain Current (ID): 200 mA
Drain to Source Breakdown Voltage: 50 V
Turn-Off Delay Time: 20 ns
Drain to Source Resistance: 700 mΩ
Gate to Source Voltage (Vgs): 20 V

Trans Mosfet N-ch 50V 0.22A 3-PIN SOT-23 T/r Product overview: BSS138_G from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.22A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 0.22A, SOT-23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSS138_G can be used for catalog matching and distributor lookup.