onsemi Single Bipolar Transistors BSP19AT1

Description
TRANS NPN 1A 350V SOT223
  • Single Bipolar Transistors - BSP19AT1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors (BJT) - Single - BSP19AT1 - 104065-BSP19AT1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BSP19AT1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
TRANS NPN 1A 350V SOT223
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - BSP19AT1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BSP19AT1
Single Bipolar Transistors BSP19AT1
TRANS NPN 1A 350V SOT223

TRANS NPN 1A 350V SOT223

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BSP19AT1 - 104065-BSP19AT1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BSP19AT1
104065-BSP19AT1
TRANSISTORS - Transistors (BJT) - Single - BSP19AT1 104065-BSP19AT1
Manufacturer: ON Semiconductor Win Source Part Number: 104065-BSP19AT1 Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 70MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 500mV @ 4mA, 50mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 104065-BSP19AT1
Packaging: Cut Reel
Mounting: SMD (SMT)
Frequency - Transition: 70MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 350V
Max Vce (sat): 500mV @ 4mA, 50mA
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 20mA, 10V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BSP19AT1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BSP19AT1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BSP19AT1
TRANS NPN 1A 350V SOT223

TRANS NPN 1A 350V SOT223

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BSP19AT1 104065-BSP19AT1 BSP19AT1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BSP19AT1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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