onsemi Single FETs, MOSFETs BS108G

N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Win Source Part Number: 961516-BS108G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 350mW (Ta)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Base Product Number: BS108
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V