onsemi Single Bipolar Transistors BDX54B

The BDX54B is a PNP complementary silicon Darlington transistor in a TO-220 package, designed for general-purpose amplifier and low-speed switching applications. It has a collector-emitter sustaining voltage of 80 Vdc minimum, a continuous collector current rating of 8.0 Adc, and a peak collector current of 12 Adc. The device features a high DC current gain of 2500 typical at 4.0 Adc, a collector-emitter saturation voltage of 2.0 Vdc maximum at 3.0 Adc, and 4.0 Vdc maximum at 5.0 Adc. Power dissipation is 65 W at 25°C case temperature, with thermal resistance junction-to-case of 1.92°C/W and junction-to-ambient of 70°C/W. The operating and storage junction temperature range is -65°C to +150°C. The transistor includes built-in base-emitter shunt resistors and is RoHS compliant.