onsemi Single Bipolar Transistors BDW94

The BDW94 is a PNP epitaxial silicon Darlington transistor designed for power linear and switching applications. It is packaged in a TO-220-3 case with dimensions of 9.90±0.20 mm in length, 4.50±0.20 mm in width, and 10.00±0.20 mm in height. The device has a collector-base voltage rating of -45 V, a collector-emitter voltage rating of -45 V, and can handle a continuous collector current of -12 A. The maximum power dissipation is 80 W at a case temperature of 25°C, with a maximum junction temperature of 150°C and a storage temperature range of -65°C to 150°C. The collector-emitter saturation voltage is -2 V at -5 A collector current and -20 mA base current. The DC current gain ranges from 1000 to 20000 depending on operating conditions.