onsemi TRANSISTORS - Transistors (BJT) - Single - BD239ATU BD239ATU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 079595-BD239ATU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 700mV @ 200mA, 1A
Collector Cut-off Current(Max): 300μA
Typical Gain (hFE) (Min): 15 @ 1A, 4V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Bipolar (BJT) Transistor NPN 60V 2A 30W Through Hole TO-220-3

Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: BD239ATU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BD239ATU can be used for catalog matching and distributor lookup.